LASER Doping and Superconducting Silicon (EPLA) team

Group leader : Francesca CHIODI
Centre de Nanosciences et de Nanotechnologies
The group is interested in the ultra-doping of silicon by laser for microelectronics and superconductivity.

They study the effects of very fast phase transition during a laser/surface interaction. The material used is silicon (perfect crystal, potential applications) as well as germanium and alloys of column IV of the periodic table.
The superconducting silicon thin layers are characterized by structural analysis and low temperature transport measurements.
All-silicon quantum devices, such as SQUIDs, Josephson junctions, and superconducting resonators, are then fabricated from these layers aiming to study the development of superconducting photon detectors and all-silicon electronics.