Modeling silicon-on-insulator quantum bit arrays
(Left) A SOI device with two “face to face” gates, each one controlling a quantum dot beneath. The information is encoded as a superposition of the up and down spin states of the carrier(s) trapped in these dots.
The aim of this post-doctoral position is, therefore, to leverage on modeling and simulation to strengthen our understanding of silicon qubits and optimize their design. Topics of interest include,
• Spin manipulation, readout, and coherence in silicon qubits.
• Exchange interactions in 1D and 2D arrays of silicon qubits and operation of multi-qubit gates.
Required qualifications
References
[1] Embracing the quantum limit in silicon computing,
J. J. L. Morton, D. R. McCamey, M. A. Eriksson and S. A. Lyon,
Nature 479, 435 (2011).
[2] Electron spin coherence exceeding seconds in high-purity silicon,
A. M. Tyryshkin, S. Tojo, J. J. L. Morton, H. Riemann, N. V. Abrosimov, P. Becker, J.-J. Pohl, T. Schenkel, M. L. W. Thewalt, K. M. Itoh and S. A. Lyon,
Nature Materials 11, 143 (2012).
[3] A CMOS silicon spin qubit,
R. Maurand, X. Jehl, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer and S. de Franceschi,
Nature Communications 7, 13575 (2016).
[4] Electrically driven electron spin resonance mediated by spin–valley–orbitc ouplingina silicon quantum dot,
A. Corna, L. Bourdet, R. Maurand, A. Crippa, D. Kotekar-Patil, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, X. Jehl, M. Vinet, S. de Franceschi, Y.-M. Niquet and M. Sanquer,
npj Quantum Information 4, 6 (2018).
[5] All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing,
L. Bourdet and Y.-M. Niquet,
Physical Review B 97, 155433 (2018).
[6] Electrical spin driving by g-matrix modulation in spin-orbit qubits,
A. Crippa, R. Maurand, L. Bourdet, D. Kotekar-Patil, A. Amisse, X. Jehl, M. Sanquer, R. Laviéville, H. Bohuslavskyi, L. Hutin, S. Barraud, M. Vinet, Y.-M. Niquet and S. de Franceschi,
Physical Review Letters 120, 137702 (2018).
[7] Electrical manipulation of semiconductor spin qubits within theg-matrix formalism,
B. Venitucci, L. Bourdet, D. Pouzada and Y.-M. Niquet,
Physical Review B 98, 155319 (2018).
[8] Simple model fo relectrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation,
B. Venitucci and Y.-M. Niquet,
Physical Review B 99, 115317 (2019).
[9] A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation,
T. Lundberg, J. Li, H. Hutin, B. Bertrand, D. J. Ibberson, C.-M. Lee, D. J. Niegemann, M. Urdampilleta, N. Stelmashenko, T. Meunier, Jason W. A. Robinson, L. Ibberson, M. Vinet, Y.-M. Niquet and M. F. Gonzalez-Zalba,
arXiv: 1910.10118.
[10] Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits,
J. Li, B. Venitucci and Y.-M. Niquet,
arXiv:2003.07592.
Additional information:
http://www.cea.fr/drf/irig/english/Pages/Departments/DPhy.aspx
http://www.researchgate.net/profile/Yann-Michel_Niquet
http://scholar.google.fr/citations?user=h02ymwoAAAAJ
More about Grenoble and its surroundings:
http://www.isere-tourism.com/